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| LESHAN RADIO COMPANY, LTD. Silicon Pin Diode LMVL3401T1 This device is designed primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits. Supplied in a Surface Mount package. * Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability * Low Capacitance - 0.7 pF Typ at VR = 20 Vdc * Very Low Series Resistance at 100 MHz - 0.34 Ohms (Typ) @ IF = 10 mAdc * Pb-Free package is available SOD- 323 1 SILICON PIN SWITCHING DIODE 2 DEVICE MARKING AND ORDERING INFORMATION Device LMVL3401T1 LMVL3401T1G Marking 4D 4D Package SOD-323 SOD-323 (Pb-Free) Shipping 3000/Tape&Reel 3000/Tape&Reel 1 CATHODE 2 ANODE MAXIMUM RATINGS Symbol VR IF Symbol PD Rating Continuous Reverse Voltage Peak Forward Current Characteristic Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Value 20 20 Max 200 1.57 635 150 Unit Vdc mAdc Unit mW mW/C C/W C THERMAL CHARACTERISTICS RJA TJ, Tstg *FR-4 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Reverse BreakdownVoltage (IR = 10 Adc) Diode Capacitance (VR = 20 Vdc) Series Resistance (IF = 10 mAdc, f =100MHz) Reverse Leakage Current (VR = 25 Vdc) Symbol V(BR)R CT RS IR Min 35 -- -- -- Typ -- -- - -- Max -- 1.0 0.7 0.1 Unit Vdc pF Adc LMVL3401T1-1/3 LESHAN RADIO COMPANY, LTD. LMVL3401T1 TYPICAL CHARACTERISTICS I F , FORWARD CURRENT (mA) RS, SERIES RESISTANCE () I F, FORWARD CURRENT (mA) VF, FORWARD VOLTAGE (VOLTS) Figure 1. Series Resistance Figure 2. Forward Voltage CT, DIODE CAPACITANCE (pF) I R, REVERSE CURRENT ( A) VR, REVERSE VOLTAGE (VOLTS) TA, AMBIENT TEMPERATURE (C) Figure 3. Diode Capacitance Figure 4. Leakage Current LMVL3401T1-2/3 LESHAN RADIO COMPANY, LTD. LMVL3401T1 SOD-323 NOTES: 1.CONTROLLING DIMENSION MILLIME TERS 2.LEAD THICKNESS SPECIFIEDPERL/FDRAWINGWITH SOLDERPLATING LMVL3401T1-3/3 |
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